| 摘要 |
PURPOSE: A method for programming a flash memory device is provided to standardize the distribution of the threshold voltage in memory cells which are connected to even-bit-lines and odd-bit-lines by correcting the distribution of the threshold voltage in a memory cell, which is connected to the even-bit-lines, to be normal. CONSTITUTION: A first program is operated to increase the threshold voltage of a first memory cell to a first level. The first memory cell is connected to even bit-lines(BLe). The first level is lower than a target voltage. A second program is operated to increase the threshold voltage of a second memory cell to a second level. The second memory cell is connected to odd bit-lines(BLo). The second level is higher than or equal to the target voltage. |
