| 摘要 |
PURPOSE: A semiconductor device and a forming method thereof are provided to improve the overlap margin of a bit line and a metal contact by extending and forming a bit line pad contacting the metal contact. CONSTITUTION: A bit line contact(106) is formed on a semiconductor substrate(100). A gate(102) is included between bit line contacts. A first interlayer insulating film(104) insulates the gate and the bit line contact. A second interlayer insulating film(108) is formed on the top of the first interlayer insulating film. A T-shaped bit line pad(118) passes through the second interlayer insulating film and is contacted with the bit line contact.
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