发明名称 Back-illuminated image sensor and method of fabricating the same
摘要 A back-illuminated image sensor may include a substrate in which photodiodes are disposed; an insulating layer on a first surface of the substrate; an interconnection layer in the insulating layer; an anti-reflection layer between the substrate and the insulating layer; a plurality of color filters on a second surface of the substrate opposite to the first surface; and a microlens on the color filters. Because the anti-reflection layer may be between the substrate and an interlayer dielectric layer, the reflection rate of light that passes through the substrate and arrives at an interface between the substrate and the interlayer insulating layer may be reduced.
申请公布号 US7750280(B2) 申请公布日期 2010.07.06
申请号 US20070987607 申请日期 2007.12.03
申请人 SAMSUNG ELECTRONICS, CO., LTD. 发明人 HWANG SUNG-HO;LEE DUCK-HYUNG;MOON CHANG-ROK;KWON DOO-WON
分类号 B05D5/12 主分类号 B05D5/12
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