发明名称 |
Rectifier with PN clamp regions under trenches |
摘要 |
A structure that includes a rectifier is formed as follows. A trench is formed in a semiconductor region of a first conductivity type. A dielectric layer is formed along opposing sidewalls of the trench but is discontinuous along the bottom of the trench. A doped liner is formed over the dielectric layer and along the bottom of the trench. The doped liner includes dopants of a second conductivity type and is in direct contact with the semiconductor region along the bottom of the trench. A portion of the dopants are diffused from the doped liner into the semiconductor region along the bottom of the trench to form a doped region. The doped region forms a PN junction with the surrounding semiconductor region.
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申请公布号 |
US7750412(B2) |
申请公布日期 |
2010.07.06 |
申请号 |
US20080186743 |
申请日期 |
2008.08.06 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
RINEHIMER MARK |
分类号 |
H01L21/331;H01L21/04;H01L21/20;H01L21/36 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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