发明名称 Semiconductor device and method for manufacturing the same
摘要 A semiconductor device includes: a semiconductor substrate that has an integrated circuit, a passivation film formed above the integrated circuit, and an electrode electrically connected to the integrated circuit, the passivation film having an uneven surface, the electrode having at least a portion exposed through the passivation film; a first resin layer that is disposed on the passivation film; a second resin layer that covers the passivation film and the first resin layer; and a wiring that extends from the electrode to a first part of the second resin layer above the first resin layer, the electrode passing on a second part of the second resin layer above the passivation film.
申请公布号 US7750468(B2) 申请公布日期 2010.07.06
申请号 US20080032730 申请日期 2008.02.18
申请人 SEIKO EPSON CORPORATION 发明人 ASAKAWA TATSUHIKO
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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