| 摘要 |
<p>PURPOSE: A manufacturing method of a backside illuminating image sensor is provided to effectively remove the defect from the surface of a substrate in the manufacturing of an image sensor by performing an annealing process after removing the backside of the substrate. CONSTITUTION: An ion implantation layer is formed wholly on the front side of a first substrate. A pixel region is defined by forming an element isolation region(110) on the front side of the first substrate. A light sensing part(120) and a readout circuit(130) are formed in the pixel region. An interlayer dielectric layer and a wiring are formed on the front side of the first substrate. A second substrate(200) is bonded to the front side of the first substrate on which the wiring is formed. The lower of the first substrate is removed from the ion implantation layer. An annealing process is performed on the back side of the first substrate.</p> |
