| 摘要 |
PURPOSE: A backside-illuminating image sensor and a manufacturing method thereof are provided to prevent edge die failure and plasma damage by stably and efficiently removing the backside from a substrate using an ion implantation technique. CONSTITUTION: An ion implantation layer(105) is formed on the front side of a first substrate(100). A light sensing part(120) and a readout circuit(130) are formed on the front side of the first substrate on which the ion implantation layer is formed. An interlayer dielectric layer(160) is formed on the front side of the first substrate. Wiring and pad wiring are formed on the interlayer dielectric layer. A second substrate(200) is bonded to the front side of the first substrate. The lower of the first substrate is removed from the ion implantation layer.
|
