发明名称 |
WIRE STRUCTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR |
摘要 |
PURPOSE: A semiconductor wiring and forming method is provided to skip the selective etching process of a bit line by patterning using a trench and a contact hole to form a bit line and a bit line contact. CONSTITUTION: An element isolation region(105) setting an active area(101) on a semiconductor substrate(100) is formed. A first insulation layer(130), an etching stopping layer(140), and a stack of the second insulation layer are formed. A contact hole passing through the stack is formed.
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申请公布号 |
KR20100076704(A) |
申请公布日期 |
2010.07.06 |
申请号 |
KR20080134832 |
申请日期 |
2008.12.26 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KANG, CHUN SOO;LEE, JEON KYU |
分类号 |
H01L21/8242;H01L21/28;H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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