发明名称 WIRE STRUCTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 PURPOSE: A semiconductor wiring and forming method is provided to skip the selective etching process of a bit line by patterning using a trench and a contact hole to form a bit line and a bit line contact. CONSTITUTION: An element isolation region(105) setting an active area(101) on a semiconductor substrate(100) is formed. A first insulation layer(130), an etching stopping layer(140), and a stack of the second insulation layer are formed. A contact hole passing through the stack is formed.
申请公布号 KR20100076704(A) 申请公布日期 2010.07.06
申请号 KR20080134832 申请日期 2008.12.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG, CHUN SOO;LEE, JEON KYU
分类号 H01L21/8242;H01L21/28;H01L27/108 主分类号 H01L21/8242
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