Semiconductor device and method for producing it

摘要

A semiconductor device with a field ring in an edge pattern of a semiconductor body with a central cell area and with field plate discharge pattern. The edge pattern exhibits at least one horizontal field plate which is arranged with one end over the field ring and with its other end on insulating layers towards the edge of the semiconductor body. A first ring-shaped area of a type of conduction doped complementary to a drift section material exhibits a field ring effect. A second highly doped ring-shaped area which contacts the one end of the horizontal field plate and forms a pn junction with the first ring-shaped area and which is arranged within the first area exhibits a locally limited punch-through effect or a resistive contact to the drift section material.