发明名称 |
Electrostatic discharge protection circuit |
摘要 |
A method for reducing a parasitic capacitance of an electrostatic discharge (ESD) protection circuit for an integrated circuit (IC) includes providing an ESD protection circuit including a plurality of transistors; coupling one end of a resistor to a shared drain of the plurality of transistors; and coupling an opposite end of the resistor to at least one of an input pad of the IC, a blocking capacitor of the IC and a transistor in the IC.
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申请公布号 |
US7751164(B1) |
申请公布日期 |
2010.07.06 |
申请号 |
US20080154706 |
申请日期 |
2008.05.27 |
申请人 |
MARVELL INTERNATIONAL LTD. |
发明人 |
JIN XIAODONG;SUTARDJA SEHAT;TSE LAWRENCE;TSAI KING CHUN |
分类号 |
H02H9/00;H02H3/22;H03K17/16 |
主分类号 |
H02H9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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