发明名称 Electrostatic discharge protection circuit
摘要 A method for reducing a parasitic capacitance of an electrostatic discharge (ESD) protection circuit for an integrated circuit (IC) includes providing an ESD protection circuit including a plurality of transistors; coupling one end of a resistor to a shared drain of the plurality of transistors; and coupling an opposite end of the resistor to at least one of an input pad of the IC, a blocking capacitor of the IC and a transistor in the IC.
申请公布号 US7751164(B1) 申请公布日期 2010.07.06
申请号 US20080154706 申请日期 2008.05.27
申请人 MARVELL INTERNATIONAL LTD. 发明人 JIN XIAODONG;SUTARDJA SEHAT;TSE LAWRENCE;TSAI KING CHUN
分类号 H02H9/00;H02H3/22;H03K17/16 主分类号 H02H9/00
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