| 摘要 |
<p>PURPOSE: A fine pattern manufacturing method of a semiconductor device is provided to form a fine pattern of a resolution for the exposure device by using a spacer. CONSTITUTION: A first thin film, a second thin film, and a third thin film are successively formed on a etch target layer(201). A sacrificial layer pattern is formed on the third thin film by the photo lithography process. A spacer(203A) is formed on a sidewall of the sacrificial layer pattern. The sacrificial layer pattern is removed. A third thin film on a part exposed by the removal of the sacrificial layer pattern is etched.</p> |
