| 摘要 |
<p>PURPOSE: A manufacturing method of a semiconductor device is provided to from a metal wiring with the fine pattern of resolution for the exposure equipment by using a spacer and the damascene method. CONSTITUTION: A sacrificial layer pattern is formed on a conductive layer(202). An insulation spacer(207A) is formed on a sidewall of the sacrificial layer pattern. An open unit(208) is formed by removing the sacrificial layer pattern. A metal line is formed by burying the metal in the open unit.</p> |
