Method for manufacturing semiconductor optical device

摘要

A method for manufacturing an laser diode includes: providing a wafer having thereon a semiconductor structure; depositing an SiO2 film; forming channels and a waveguide ridge between the channels in the wafer; forming an SiO2 film over the wafer; forming a resist pattern covering the SiO2 film in the channels such that the top surfaces of the resist pattern are lower than the top surface of the deposited SiO2 film on the top of the waveguide ridge, the resist pattern exposing the SiO2 film on the top of the waveguide ridge; removing the SiO2 film and the deposited SiO2 film by wet etching, using the resist pattern as a mask, to expose a p-GaN layer in the waveguide ridge; and forming an electrode layer on the top surface of the p-GaN layer.