发明名称 SEMICONDUCTOR MEMORY DEVICE AND ITS DRIVING METHOD
摘要 PURPOSE: A semiconductor memory device and a method for driving the same are provided to regulate a column access timing based on the location of a plurality of banks. CONSTITUTION: A first column selective signal from a selection unit(330) is generated in response to a column access command which corresponds to a first bank. The first column selective signal is activated after a first period. A second column selective signal is generated in response to the column access command which corresponds to a second bank. The second column selective signal is activated after a second period. The second period is longer than the first period.
申请公布号 KR20100076543(A) 申请公布日期 2010.07.06
申请号 KR20080134634 申请日期 2008.12.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG, MIN YOUNG;DO, CHANG HO
分类号 G11C8/18;G11C8/12 主分类号 G11C8/18
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