发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND ITS DRIVING METHOD |
摘要 |
PURPOSE: A semiconductor memory device and a method for driving the same are provided to regulate a column access timing based on the location of a plurality of banks. CONSTITUTION: A first column selective signal from a selection unit(330) is generated in response to a column access command which corresponds to a first bank. The first column selective signal is activated after a first period. A second column selective signal is generated in response to the column access command which corresponds to a second bank. The second column selective signal is activated after a second period. The second period is longer than the first period. |
申请公布号 |
KR20100076543(A) |
申请公布日期 |
2010.07.06 |
申请号 |
KR20080134634 |
申请日期 |
2008.12.26 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KANG, MIN YOUNG;DO, CHANG HO |
分类号 |
G11C8/18;G11C8/12 |
主分类号 |
G11C8/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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