| 摘要 |
<p>PURPOSE: A pattern formation method of a semiconductor device is provided to prevent the size of a semiconductor device from increasing by stably forming multiple patterns which are separated from each other. CONSTITUTION: An etching object film is formed on a semiconductor substrate(101). Multiple first photo resist patterns are formed on the etching object film at first intervals. Multiple etch patterns(114) are formed by etching an etching object film using a mask First photo resist patterns are removed. A second photoresist pattern(117) exposing etch patterns included in the second group is formed.</p> |
