| 摘要 |
<p>PURPOSE: A manufacturing method for a semiconductor device is provided to prevent junction leakage during formation of source/drain junction by forming an active edge area into a fence structure through epitaxial growth. CONSTITUTION: A multi-layered pad is formed in a semiconductor substrate(201). A part of the formed multi-layered pad is selectively removed. An STI is formed by etching the removed pad with a hard mask. A fence area is formed in a corner edge of the STI. An active fence(207) is formed on the sidewall of STI and the fence area. A dual gate(209), a spacer wall(210) and a source/drain(211) are formed by gap-filling and planarizing the active fence with an oxide film.</p> |
