发明名称 |
Method for the production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone |
摘要 |
According to one embodiment, a method for the production of a stop zone in a doped zone of a semiconductor body comprises irradiating the semiconductor body with particle radiation in order to produce defects in a crystal lattice of the semiconductor body. The semiconductor body is exposed to an environment containing dopant atoms, during which dopant atoms are indiffused into the semiconductor body at an elevated temperature.
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申请公布号 |
US7749876(B2) |
申请公布日期 |
2010.07.06 |
申请号 |
US20080039173 |
申请日期 |
2008.02.28 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BARTHELMESS REINER;MAUDER ANTON;NIEDERNOSTHEIDE FRANZ-JOSEF;SCHULZE HANS-JOACHIM |
分类号 |
H01L21/266;H01L29/08;H01L29/32;H01L29/739;H01L29/78;H01L29/861;H01L29/868 |
主分类号 |
H01L21/266 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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