| 发明名称 |
Low contact resistance metal contact |
| 摘要 |
A semiconductor structure and methods of making the same. The semiconductor structure includes a substrate having a silicide region disposed above a doped region, and a metal contact extending through the silicide region and being in direct contact with the doped region.
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| 申请公布号 |
US7749890(B2) |
申请公布日期 |
2010.07.06 |
| 申请号 |
US20090464348 |
申请日期 |
2009.05.12 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
WONG KEITH KWONG HON;YANG CHIH-CHAO;YANG HAINING S. |
| 分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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