发明名称 NAND FLASH MEMORY DEVICE AND METHOD OF WRITING DATA IN NAND FLASH MEMORY DEVICE
摘要 PURPOSE: A NAND flash memory device and a writing method thereof are provided to enhance the write speed property by copying back the data written on a spare block with a main block. CONSTITUTION: A plurality of pages is arranged in main blocks. The page is a basic unit of the write operation. A spare block is copied back with the main block in a standby state(509). A write data is programmed during inputting the write command(502). Spare blocks have the same cell array size as main blocks. Spare blocks share the same page buffer.
申请公布号 KR20100076692(A) 申请公布日期 2010.07.06
申请号 KR20080134820 申请日期 2008.12.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, EUN SEOK
分类号 G11C16/10;G11C16/02;G11C16/06 主分类号 G11C16/10
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