发明名称 |
NAND FLASH MEMORY DEVICE AND METHOD OF WRITING DATA IN NAND FLASH MEMORY DEVICE |
摘要 |
PURPOSE: A NAND flash memory device and a writing method thereof are provided to enhance the write speed property by copying back the data written on a spare block with a main block. CONSTITUTION: A plurality of pages is arranged in main blocks. The page is a basic unit of the write operation. A spare block is copied back with the main block in a standby state(509). A write data is programmed during inputting the write command(502). Spare blocks have the same cell array size as main blocks. Spare blocks share the same page buffer. |
申请公布号 |
KR20100076692(A) |
申请公布日期 |
2010.07.06 |
申请号 |
KR20080134820 |
申请日期 |
2008.12.26 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHOI, EUN SEOK |
分类号 |
G11C16/10;G11C16/02;G11C16/06 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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