| 摘要 |
A method of fabricating a storage node with a supported structure is provided. A dielectric stacked comprising an etch stop layer, a first dielectric layer, a support layer and a second dielectric layer is formed on a substrate. An opening is etched into the dielectric stacked. A conductive layer is formed on the second dielectric layer and inside the opening. The conductive layer directly above the second dielectric layer is removed to form columnar node structure. The second dielectric layer is then removed. A spacer layer is deposited on the support layer and the columnar node structure. A tilt-angle implant is performed to implant dopants into the spacer layer. The undoped spacer layer is removed to form a hard mask. The support layer not covered by the hard mask is etched away to expose the first dielectric layer. The first dielectric layer and the hard mask are removed.
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