PHASE CHANGE RANDOMM ACCESS MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A phase change memory device and a manufacturing method thereof are provided to reduce void between phase change pattern layers by forming a capping layer in the state a dielectric layer has been filled between the phase change pattern layers. CONSTITUTION: A plurality of phase change pattern layers(165) are formed on a semiconductor substrate(100). A first interlayer dielectric layer(110) is filled between the phase change pattern layers. A capping layer(190) is formed on the phase change pattern layers and the first interlayer dielectric layer. The phase change pattern layers are formed in a row in a memory cell line. A upper electrode(210) connected to the phase change pattern layers is further comprised.