| 摘要 |
<p>PURPOSE: A mask pattern critical dimension correcting method for extreme ultraviolet lithography is provided to enhance the CD(Critical Dimension) uniformity by changing the reflectivity of a reflecting layer of a domain which requires the correction through the carbon evaporation. CONSTITUTION: A mask for the extreme ultraviolet ray lithography is manufactured(110). A pattern is formed on the wafer by implementing the extreme ultraviolet ray lithography using the mask(120). The CD of the pattern embodied on the wafer is measured(130). A correction parameter is calculated by obtaining the difference of the CD of the pattern and the target CD(140). The reflectivity of the mask is corrected by evaporating the carbon film(150).</p> |
