| 摘要 |
PURPOSE: A flash memory device and a data erase method thereof are provided to erase the cell of only a biased word line by biasing a part of a word line to voltage level. CONSTITUTION: A cell block(110) comprises a plurality of cell strings and a plurality of word lines. A plurality of cell strings comprises a plurality of cells which are connected in series. A plurality of word lines shares a gate of the cells comprising the cell string. A plurality of word line switches(130) switches and connects each word line of the cell block by a predetermined voltage level. A controller(150) receives a deletion command and a row address. The controller turns on/off the switch of each word line.
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