METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a semiconductor device is provided to prevent a seam generated on a conductive material for a contact plug from increasing by omitting a planarization process and forming a conductive material for a top metal line after forming a conductive material for a contact plug. CONSTITUTION: Inter-layer insulating films(102,106) are formed on a semiconductor substrate(100). A contact hole is formed in the inter-layer insulating film. The first conductive film is formed on the inside of the contact hole and the top of the inter-layer insulating film. The second conductive film is formed on the top of the first conductive film. The second conductive film and the first conductive film are patterned so that a top metal line(104) and a contact plug are simultaneously formed.