| 摘要 |
A method for manufacturing an electrolyte material layer with a chalcogenide material incorporated or deposited therein for use in semiconductor memory devices, in particular resistively-switching memory devices or components. The method comprises the steps of producing a semiconductor substrate, depositing a binary chalcogenide layer onto the semiconductor substrate, depositing a sulphur-containing layer onto the binary chalcogenide layer, and creating a ternary chalcogenide layer comprising at least two different chalcogenide compounds ASexSy. One component A of the chalcogenide compounds ASexSy comprises materials of the IV elements main group, e.g., Ge, Si, or of a transition metal, preferably of the group consisting of Zn, Cd, Hg, or a combination thereof.
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