发明名称 |
Methods of forming metal-insulator-metal (MIM) capacitors with passivation layers on dielectric layers |
摘要 |
Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.
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申请公布号 |
US7749852(B2) |
申请公布日期 |
2010.07.06 |
申请号 |
US20060413282 |
申请日期 |
2006.04.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JONG-CHAE;YI DUK-MIN;JUNG SANG-IL;HONG JONG-WOOK |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
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