发明名称 Methods of forming metal-insulator-metal (MIM) capacitors with passivation layers on dielectric layers
摘要 Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.
申请公布号 US7749852(B2) 申请公布日期 2010.07.06
申请号 US20060413282 申请日期 2006.04.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM JONG-CHAE;YI DUK-MIN;JUNG SANG-IL;HONG JONG-WOOK
分类号 H01L21/20 主分类号 H01L21/20
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