| 摘要 |
<p>PURPOSE: A wiring array of a flash memory device is provided to reduce the area resistance by increasing an area of a real line as much as the area of the dummy line by connecting a real line and a dummy line in parallel to form a parallel current path. CONSTITUTION: A wiring array comprises one or more of dummy line(DL) among a plurality of real lines(RL). A first connecting unit(CT1) and a second connecting unit(CT2) connect the dummy line and the real line, respectively. The dummy line comprises a starting part and an ending part. The dummy line is formed with the same pitch as the real line.</p> |
