| 摘要 |
<p>PURPOSE: A mask pattern critical dimension correcting method for the extreme ultraviolet ray lithography is provided to obtain the uniform CD distribution by adjusting the oxidization thickness of a reflection layer according to the area of the mask in order to control the thickness of the oxidization layer according to the required amount of correction. CONSTITUTION: A mask for the extreme ultraviolet ray lithography is manufactured(110). A pattern is formed on the wafer by implementing the extreme ultraviolet lithography using the mask(120). The CD(Critical Dimension) of a pattern embodied on the wafer is measured(130). The correction parameter is calculated by obtaining the difference between the CD of the pattern and the target CD(140). The reflectivity of the mask is corrected by oxidizing the reflection layer of the mask(150).</p> |
