发明名称 METHOD FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION DEVICE
摘要 <p>PURPOSE: A manufacturing method of a magnetic tunnel bonding device is provided to prevent the short between a free layer and a pinned layer by forming an insulative polymer layer on both sidewalls of a first pattern comprising a free layer. CONSTITUTION: A stacked layer is formed in which a pinning layer(22), a pinned layer(23), a tunnel insulating layer(24) and a free layer(25) are successively stacked. A hard mask pattern(26) is formed on the stacked layer. The stacked layer is etched to the free layer using the hard mask pattern as an etching barrier to form a first pattern(27). A insulative polymer layer(28) is formed on both sidewalls of the first pattern.</p>
申请公布号 KR20100076556(A) 申请公布日期 2010.07.06
申请号 KR20080134653 申请日期 2008.12.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, YOU SONG
分类号 H01L43/12;H01L21/027 主分类号 H01L43/12
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