METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a semiconductor device is provided to reduce the critical dimension of an assistant pattern by oxidizing the surface of the assistant pattern and removing an oxidized part. CONSTITUTION: An etch target layer is formed on a semiconductor substrate(100). An assistant pattern(104) is formed on the etch target layer. The sidewall of the assistant pattern is oxidized through an oxidation process. The sidewall of the assistant pattern is removed to reduce critical dimension. A spacer(106) is formed in the sidewall of the assistant pattern. The assistant pattern is removed. The etch target layer is etched using a spacer as an etching mask.