发明名称 |
Solid-state imaging device and imaging apparatus |
摘要 |
A CCD type solid-state imaging device includes: a photoelectric conversion element (n layer 2, p layer 3) formed in a semiconductor substrate 1; a charge transfer channel 5 that transfers electric charges generated in the photoelectric conversion element; a charge read region 6 that reads out the electric charges accumulated in the photoelectric conversion element into the charge transfer channel 5; and a charge read electrode 8 formed above the charge read region 6 with a gate insulating film 10 disposed therebetween. The charge read electrode 8 controls the reading out of the electric charges into the charge transfer channel 5. A gap is formed between the photoelectric conversion element and the charge read electrode 8 in plan view.
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申请公布号 |
US7750376(B2) |
申请公布日期 |
2010.07.06 |
申请号 |
US20070802884 |
申请日期 |
2007.05.25 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
WATANABE TAKETO;NAGASE MASANORI |
分类号 |
H01L27/148;H04N5/335;H04N5/359;H04N5/369;H04N5/372 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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