摘要 |
PURPOSE: An internal voltage generating circuit is provided to prevent the deterioration of an internal voltage by performing the auto control of a semiconductor memory device. CONSTITUTION: A first internal voltage generator(100) generates an internal voltage. A second internal voltage generator(200) controls an operation section according to the level of a target voltage. The second internal voltage generator is driven with the first internal voltage generator for a controlled operation period. The second internal voltage generator generates an additional internal voltage. |