发明名称 INTERNAL VOLTAGE GENERTING CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: An internal voltage generating circuit is provided to prevent the deterioration of an internal voltage by performing the auto control of a semiconductor memory device. CONSTITUTION: A first internal voltage generator(100) generates an internal voltage. A second internal voltage generator(200) controls an operation section according to the level of a target voltage. The second internal voltage generator is driven with the first internal voltage generator for a controlled operation period. The second internal voltage generator generates an additional internal voltage.
申请公布号 KR20100076771(A) 申请公布日期 2010.07.06
申请号 KR20080134934 申请日期 2008.12.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG, HO DON
分类号 G11C5/14;G11C11/4074 主分类号 G11C5/14
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