发明名称 |
Chemical vapor deposition apparatus |
摘要 |
Provided is a chemical vapor deposition apparatus including a reaction chamber; a susceptor that is provided in the reaction chamber and has a plurality of wafers mounted thereon; a rotation driving unit that rotates the susceptor; a gas inlet that is provided in the reaction chamber and introduces reaction gas into the reaction chamber from the outside of the reaction chamber; a gas outlet that is provided in the reaction chamber and discharges the reaction gas, of which the reaction is finished, from the inside of the reaction chamber along the rotation-axis direction of the susceptor; and a variable gas-flow adjusting unit that is provided between the gas inlet and the gas outlet and is formed by superimposing a plurality of gas jetting plates having a plurality of holes.
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申请公布号 |
US7749326(B2) |
申请公布日期 |
2010.07.06 |
申请号 |
US20080177037 |
申请日期 |
2008.07.21 |
申请人 |
SAMSUNG LED CO., LTD. |
发明人 |
KIM CHANG SUNG SEAN;HONG JONG PA;GHIM JOONG EL |
分类号 |
C23C16/455;C23C16/06;C23C16/22;C23C16/458;C23F1/00;H01L21/306 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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