发明名称 CHEMICAL-MECHANICAL POLISHING APPARATUS
摘要 PURPOSE: A CMP(Chemical Mechanical Polishing) apparatus is provided to polish a wafer with the polished surface faced upward, thereby removing the need for turning the wafer upside down. CONSTITUTION: A CMP apparatus(100) comprises a polishing platen(110), a mounting unit(120), and a polishing head(130). The polishing platen is rotated with a rotational driving unit(111). The mounting unit is installed on the upper side of the polishing platen. A wafer(W) is installed in the mounting unit with a polished surface(P) exposed upward. The polishing head is installed on the top of the polishing platen to rotate a polishing pad(131) and polish the polished surface of the wafer.
申请公布号 KR20100076220(A) 申请公布日期 2010.07.06
申请号 KR20080134178 申请日期 2008.12.26
申请人 DONGBU HITEK CO., LTD. 发明人 KO, JONG HWAN
分类号 B24B37/00;B24B37/04;H01L21/304 主分类号 B24B37/00
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