| 摘要 |
<p>PURPOSE: A manufacturing method of a non volatile memory device is provided to prevent the etching defect that protrudes to a side of a gate insulation layer by solving the etching interference problem between gates due to the residue of a polymer layer. CONSTITUTION: A floating gate electrode, an inter-gate insulating layer(131), a control gate electrode film(141), and a low resistive layer(151) are formed on a substrate(100). A hard mask film pattern(161) is formed on the low resistive layer. The inter-gate insulating layer is exposed by etching the low resistive layer and the control gate electrode that exposed on the hard mask film pattern.</p> |
