METHOD FOR FORMING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A formation method of a semiconductor device is provided to improve definition quadruply using a spacer patterning technique. CONSTITUTION: A photosensitive pattern is formed at the upper part of a semiconductor substrate(100) in which an etched layer(102) is formed. A first spacer(106) is formed on the sidewall of the photosensitive pattern. A second spacer is formed on the sidewall of the first spacer. A third spacer(110) is formed on the sidewall of the second spacer. The photosensitive pattern and the second spacer are removed. A final pattern is formed by using a first spacer and a second spacer as an etching mask and etching the etched layer.