METHOD OF MANUFACTURING NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A manufacturing method of a non-volatile memory device is provided to prevent the threshold voltage reduction of a non-volatile memory device by protecting a dielectric layer through a protective film when a void is generated. CONSTITUTION: An element isolation film(208) and a floating gate are formed on a semiconductor substrate(200). A dielectric film(210) is formed along the surface of the floating gate and the element isolation film. A protective film(212) is formed along the surface of the dielectric film. A control gate is formed on the top of the protective film. The protective film is formed of the same material as the control gate.