发明名称 Surface acoustic wave (SAW) device, module and oscillator for improving a Q factor
摘要 [Problem] In a SAW device using a quartz crystal substrate, prevent the deterioration of Q factor due to the difference in the peak frequency between the radiation conductance of an IDT and the reflection coefficient of a reflector. [Means to Solve the Problem] A surface acoustic wave (SAW) device includes a piezoelectric substrate made of a quartz crystal flat plate where a cut angle of a rotated Y-cut quartz substrate is set in −64.0°<&thetas;<−49.3° with a crystalline Z axis and a propagation direction of the surface acoustic wave is set at 90°±5° with a crystalline X axis, an interdigital transducer (IDT) formed on the piezoelectric substrate and reflectors disposed at both sides of the IDT, wherein an exciting wave is SH wave, an electrode film thickness “H/λ” normalized by a wavelength of the IDT is 0.05≦̸H/λ≦̸0.07 where “λ” is a wavelength of the exciting SAW, and a ratio of an electrode pitch between the IDT and the reflector “Lt/Lr” is set to satisfy the following formula: 31.50×(H/λ)2−4.435×(H/λ)+1.133≦̸Lt/Lr≦̸−3.000×(H/λ)2+0.500×(H/λ)+0.9796 where “Lt” is the electrode pitch of the IDT and “Lr” is the electrode pitch of the reflector.
申请公布号 US7750533(B2) 申请公布日期 2010.07.06
申请号 US20060922408 申请日期 2006.06.15
申请人 EPSON TOYOCOM CORPORATION 发明人 OWAKI TAKUYA;MORITA TAKAO
分类号 H03H9/125 主分类号 H03H9/125
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