| 摘要 |
A method for adjusting one or more dimensions of a photomask subsequent to etching of a defective pattern in the chrome-containing layer thereof is provided. The method includes subjecting the chrome-containing layer of a photomask to a wet etch process utilizing a solution comprising deionized water and ozone. The length of exposure is directly proportional to the degree of adjustment desired. Accordingly, the method of the present invention provides a way in which dimensions of a photomask may be adjusted by a small amount (e.g., a few angstroms) or more severely adjusted, for example, by 20-30 nanometers or more.
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