| 摘要 |
The present invention relates to a manufacturing method of a semiconductor device having a size approximately same as the size of a semiconductor chip when viewed in a plan view, in which the semiconductor chip is flip-chip bonded to a wiring pattern, and an object of the invention is to provide the manufacturing method of a semiconductor device which allows reduction in the number of process steps to realize the minimization of manufacturing cost. An insulating resin 13 is formed so as to cover a plurality of internal connection terminals 12 and a surface of a plurality of semiconductor chips 11 on which the plurality of internal connection terminals are provided, then a metal layer 33 for forming a wiring pattern is formed over the insulating resin 13, and by pressing the metal layer 33, the metal layer 33 and the plurality of internal connection terminals 12 are pressure-bonded. |
