发明名称 METHOD FOR FABRICATING PHASE SHIFT MASK
摘要 PURPOSE: A manufacturing method of a phase shifting mask is provided to reduce the manufacturing time and cost by minimizing the time required to correct the pinhole created on the frame area. CONSTITUTION: A phase shift layer(110), a first light shielding layer(120), and a resist film(130) are formed on a substrate. A blank mask including a second light shielding layer(140) is prepared on the opposite side of the substrate. The first patterning and the second patterning are implemented for the blank mask, then, the phase shift pattern is formed on the main pattern area of the substrate. The phase shift pattern and the first light shield pattern are formed on the frame area of the substrate.
申请公布号 KR20100076680(A) 申请公布日期 2010.07.06
申请号 KR20080134806 申请日期 2008.12.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, HEE CHUN
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址