| 摘要 |
PURPOSE: A semiconductor device manufacturing method is provided to prevent the generation of a short between conductive patterns adjacent to a contact hole by forming a contact hole having high aspect ratio twice. CONSTITUTION: A conductive layer(42) is formed on a substrate(41). A first insulating layer(43) is formed on the conductive layer. A plurality of conductive patterns(46) is formed on the first insulating layer. A second insulating layer covering the conductive pattern is formed on the first insulating layer. A plurality of first contact plugs(49) contacting the conductive layer is formed.
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