发明名称 LOW ADDRESS LATCH CIRCUIT FOR SEMICONDUCTOR MEMORY
摘要 PURPOSE: A low address latch circuit for a semiconductor memory is provided to reduce word line enable time in an active mode by removing gate logic in a word line enable route. CONSTITUTION: A low area control unit(10) mixes a test mode signal. The low area control unit generates an initial signal. An initial signal generates a decoder enable signal and a main word line enable signal. The low area driving unit(40) enables the decoder enable signal and main word line enable signal. The low area driving unit generates a sub word line enable signal and the main word line enable signal. The low area driving unit drives a cell array(50).
申请公布号 KR20100076805(A) 申请公布日期 2010.07.06
申请号 KR20080134975 申请日期 2008.12.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YUN, TAE SIK;CHOI, MIN SEOK
分类号 G11C11/408;G11C8/06;G11C11/4063;G11C29/18 主分类号 G11C11/408
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