发明名称 |
LOW ADDRESS LATCH CIRCUIT FOR SEMICONDUCTOR MEMORY |
摘要 |
PURPOSE: A low address latch circuit for a semiconductor memory is provided to reduce word line enable time in an active mode by removing gate logic in a word line enable route. CONSTITUTION: A low area control unit(10) mixes a test mode signal. The low area control unit generates an initial signal. An initial signal generates a decoder enable signal and a main word line enable signal. The low area driving unit(40) enables the decoder enable signal and main word line enable signal. The low area driving unit generates a sub word line enable signal and the main word line enable signal. The low area driving unit drives a cell array(50).
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申请公布号 |
KR20100076805(A) |
申请公布日期 |
2010.07.06 |
申请号 |
KR20080134975 |
申请日期 |
2008.12.26 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
YUN, TAE SIK;CHOI, MIN SEOK |
分类号 |
G11C11/408;G11C8/06;G11C11/4063;G11C29/18 |
主分类号 |
G11C11/408 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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