发明名称 |
Magnetic memory devices using magnetic domain motion |
摘要 |
A magnetic memory device includes a recording layer, a reference layer, a first input portion and a second input portion. The recording layer has perpendicular magnetization direction and a plurality of magnetic domains, and the reference layer corresponds to a portion of the recording layer and has a pinned magnetization direction. The recording layer has a data storage cell wherein a plurality of data bit regions each including a magnetic domain are formed. The magnetic domain corresponds to an effective size of the reference layer. The first input portion inputs at least one of a writing signal and a reading signal. The second input portion is electrically connected to the recording layer and inputs a magnetic domain motion signal in order to move data stored in a data bit region of the recording layer to an adjoining data bit region.
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申请公布号 |
US7751223(B2) |
申请公布日期 |
2010.07.06 |
申请号 |
US20070707002 |
申请日期 |
2007.02.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM TAE-WAN;KIM KEE-WON;CHO YOUNG-JIN;HWANG IN-JUN |
分类号 |
G11C19/00 |
主分类号 |
G11C19/00 |
代理机构 |
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