SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE HAVING THE SAME

摘要

PURPOSE: A semiconductor device, a manufacturing method thereof, and an electronic device having the same are provided to restrain the increase of the off current by forming an oxide cluster between an oxide semiconductor layer and a gate isolation layer. CONSTITUTION: A gate isolation layer(102) is formed on a gate electrode layer. A plurality of oxide clusters(106) is formed on the gate isolation layer. An oxide semiconductor layer(103) is formed on the gate isolation layer and the plurality of oxide clusters. A source electrode layer and a drain electrode layer(105a) are formed on the oxide semiconductor layer. The plurality of oxide clusters has the conductivity.