| 摘要 |
<p>PURPOSE: A manufacturing method of a phase shift mask is provided to improve the degree of integration of a semiconductor device by facilitating a micro patterning process of the semiconductor device. CONSTITUTION: A manufacturing method of a phase shift mask comprises the following steps: forming a light-shielding layer and a phase shift layer on a quartz substrate(100); pattering the light-shielding layer and the phase shift layer for forming a phase shift pattern(102a) and a light-shielding pattern(104a); and reducing the thickness of the light-shielding pattern. The phase shift layer is formed with a SOG(spin on glass) layer or a SiO_2 film. The light-shielding layer is formed with a film including chrome.</p> |
