发明名称 |
DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>PURPOSE: A display device and a manufacturing method thereof are provided to provide high electricity characteristic at a low cost. CONSTITUTION: A gate insulating layer(122) is formed on a gate electrode. A wiring(102~104) and electrode are formed on the gate insulating layer. The wiring comprises a first low resistance oxide semiconductor layer(106) and a first conductive layer on the first low resistance oxide semiconductor layer. The electrode layer comprises a second low resistance oxide semiconductor and a second conductive layer covering a first part of the second low resistance oxide semiconductor layer.</p> |
申请公布号 |
KR20100075756(A) |
申请公布日期 |
2010.07.05 |
申请号 |
KR20090129735 |
申请日期 |
2009.12.23 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ARAI YASUYUKI |
分类号 |
G02F1/136;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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