<p>PURPOSE: A method for manufacturing a nonvolatile memory device is provided to reduce power consumption by decreasing a contact area between a bottom electrode and a variable resistor pattern. CONSTITUTION: A first sacrificial film pattern including a first opening unit is formed on a lower insulation film. A pre lower insulation film pattern including a recess(125) is formed by using the first sacrificial film pattern. A second sacrificial film pattern(122) with a second opening unit is formed on the pre lower insulation film pattern and the first sacrificial film pattern. The lower insulation film pattern with a plurality of contact holes(127) is completed by using the first and second sacrificial film patterns. The plurality of contact holes is separated with each other on the recess. The contact hole is extended to the lower side of the lower insulation film pattern. A bottom electrode is formed inside the contact hole.</p>
