发明名称 CAPACITOR AND METHOD FOR FABRICATING THE SAME
摘要 PURPOSE: A capacitor and a manufacturing method thereof are provided to obtain high capacitance by widening a contact layer in contact with a storage node and a storage node contact plug than the width of the storage node. CONSTITUTION: A storage node contact plug(108) is provided. A contact layer covers a storage node contact plug. A storage node(112A) is formed on the contact layer to expose the part of the contact layer. A dielectric film is formed along the cross section of the storage node and the exposed contact layer. A plate(115) is formed on the dielectric film.
申请公布号 KR20100075234(A) 申请公布日期 2010.07.02
申请号 KR20080133875 申请日期 2008.12.24
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 CHA, HAN SEOB
分类号 H01L27/108;H01L21/8242 主分类号 H01L27/108
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