GST FOR FORMING AND PCRAM OF MAUFACTURING USING THEREOF

摘要

PURPOSE: A method for forming a phase change film and a method for manufacturing a phase change memory device using the same are provided to improve a burying property of a phase change film by forming the phase change film with an etching process of low power not to change the material property of the phase change film. CONSTITUTION: A bottom electrode is formed. An interlayer insulation layer with a hole is formed on the bottom electrode. A phase change film(240) is formed to fill the hole. A top electrode is formed on the upper side of the phase change film. The phase change film is formed by repeating a first deposition process, an etching process, and a second deposition process 1 to 10 times. The etching process of the phase change film is an RF etching process.